Influence of Schottky contact on the C-V and J-V characteristicsof HTM-free perovskite solar cells

Citation:

Y. Huang, S. Aharon, A. Rolland, L. Pedesseau, O. Durand, L. Etgar, and J. Even. 5/19/2017. “Influence of Schottky contact on the C-V and J-V characteristicsof HTM-free perovskite solar cells.” EPJ Photovoltaics, 2017,8: 85501.

Abstract:

Abstract The influence of the Schottky contact is studied for hole transport material (HTM) free
CH3NH3PbI3 perovskite solar cells (PSCs), by using drift-diffusion and small signal models. The basic
current-voltage and capacitance-voltage characteristics are simulated in reasonable agreement with experimental
data. The build in potential of the finite CH3NH3PbI3 layer is extracted from a Mott-Schottky
capacitance analysis. Furthermore, hole collector conductors with work-functions of more than 5.5 eV are
proposed as solutions for high efficiency HTM-free CH3NH3PbI3 PSCs.

Last updated on 12/05/2017